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Inductively coupled plasma etch (ICPE) is the result of the interaction of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power supply is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged through coupling glow to generate high-density plasma. Under the RF action of the lower electrode, these plasmas bombard the substrate surface, the chemical bond of semiconductor materials in the substrate pattern area is broken, and volatile substances are generated with the etching gas, It is separated from the substrate in the form of gas and then pumped away from the vacuum line.